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| Datasheet File OCR Text: |
| NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier for Phase Control Applications Electrical Characteristics: (Maximum values @ TJ = +125C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5574 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non-Repetitive Peak Reverse Blocking Voltage, VRSM NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V NTE5574 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On-State Current (Half Sine Wave, 180, TC = +85C), IT(AV) . . . . . . . . . . . . . . . . . . . . 80A RMS On-State Current (DC @ TC = +75C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125A Peak One-Cycle, Non-Repetitive Surge Current (10ms Duration, Sinusoidal Half Wave), ITSM No Voltage Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1900A 100% VRRM Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600A Maximum I2t for Fusing (10ms Duration, Sinusoidal Half Wave), I2t No Voltage Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18000A2sec 100% VRRM Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12700A2sec Peak Positive Gate Current (5ms Pulse Width), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak Positive Gate Voltage (5ms Pulse Width), +VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Peak Negative Gate Voltage (5ms Pulse Width), -VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Average Gate Power (f = 50Hz, Duty Cycle = 50%), PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W Peak Gate Power (50ms Pulse Width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W Rate of Rise of Off-State Voltage (Exponential to 67% Rated VDRM), dv/dt . . . . . . . . . . . . 500V/s Rate of Rise of ON-State Current, di/dt (Gate Drive 20V, 65, with tr = 0.5s, Vd = Rated VDRM, ITM = 2 x di/dt snubber 0.2F) Non-Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/s Typical Delay Time, td (Gate Pulse: 10V, 15 Source, tp = 6s, tr = 0.1s, Vd = rated VDRM, ITM = 50A) . . . . . 1s Typical Turn-On Time, tq (ITM = 50A, di/dt = -5A/s min, VR = 50V, dv/dt = 20V/s, Gate Bias: 0V 25, tp = 500s) 110s On-State Voltage (IPk = 250A, 10ms Sine Pulse), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V Repetitive Peak Off-State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Maximum Gate Current Required to Trigger, IGT (6V Anode-to-Cathode Applied, TJ = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA Maximum Gate Voltage Required to Trigger, VGT (6V Anode-to-Cathode Applied, TJ = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5V Maximum Holding (Anode Supply 12V Resistive Load, TJ = +25C), IH . . . . . . . . . . . . . . . . . 150mA Maximum Gate Voltage which will not Trigger any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . . . 0.25V Electrical Characteristics (Cont'd): (Maximum values @ TJ = +125C unless otherwise specified) Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case (DC Operation), RtnJC . . . . . . . . . . . . . . . . . . . . . . . 0.3C/W Thermal Resistance, Case-to-Heat Sink, RthC-HS (Mounting Surface Smooth, Flat, and Greased) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1C/W 1.227 (31.18) Max (Across Corners) Cathode .280 (7.11) Dia Max Gate (White) 6.260 (159.0) Max (Terminal 3) 7.500 Cathode (190.5) (Red) Max (Terminals 1 & 2) 1.031 (26.18) Dia Max Seating Plane .827 (27.0) Max CC CC CC .875 (22.22) Dia (Ceramic) For No. 6 Screw 2.500 (63.5) Max .500 (12.7) Max) 1/2-20 UNF Anode |
Price & Availability of NTE5574
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